Professor V. Afanas’ev devoted more than 25 years of research to development of novel experimental methods for interface characterization. In particular, a number of techniques based on internal photoemission phenomena were shown to provide unique information regarding electron states in thin films of solids and at their interfaces. In recent years these methods were successfully applied to characterize novel semiconductor heterostructures for advanced micro- and nano-electronic devices.
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Internal photoemission spectroscopy
Valeri V. Afanas'ev
The monographic book addresses the basics of the charge carrier photoemission from one solid to another - the internal photoemission, (IPE) - and different spectroscopic applications of this phenomen...
